Infrared optical materials are used in a wide range of applications such as advanced thermal systems used by the military and for security imaging applications.
Commonly used Infrared materials included in our stock are Silicon, Germanium, Calcium fluoride and ZnSe (Zinc Selenide).
GERMANIUM
1. Form of product:
- - cylindrical (rods, Plano blanks, windows)
- - rectangular (blanks, windows)
- - Other (spherical generated blanks, with elements of aspheric).
- - Customized sizes are available upon request
Package: Thermal package (vacuum sealing), then put into a wooden case or cartoon box.
Optical Properties
Index of refraction | 4.0048±0.0002 at 10.6 μm at 25ºC |
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In homogeneity of the index of refraction | ≤ 2•10-4 |
Temperature coefficient of the index of refraction | ≤ 4•10-4 |
Absorption coefficient, cm-1 |
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Transmission | 46% min at 4 μm, 45% min at 10.6 μm trough polished uncoated blank of 10 mm thickness |
General Specifications
Quality parameters (measurements) | Mono- IR |
Dimensions | 2" to 8" with tolerance ± 0.05mm |
Orientation | [111] , [100] |
Conductivity type | N |
Dopant | Sb |
Resistivity (r), Ohm×сm | Standard 5-40, other by customer request |
Density (EPD) см-2 | <105 |
Diameter, mm | 7.5-400 |
Length, mm | 30 min |
Special requirements | Optical characteristics according to requirements |
Material Properties
Crystalline form | Monocrystalline; polycrystalline |
Purity | ≥ 99.999% |
Resistivity, Ohm•cm | 1÷5; 5÷40 |
Orientation | [111] ± 2º; [100] ± 2º |
Conductivity Type | N |
2. Metallic Germanium
I. Form of granules
Quality parameters | Analysis |
Size, mm | 3-6 |
Chemical purity, sum, not less than, % weight (impurities Fe, Mn, Cu, Ni, Co, Ga, Al, Mg) | 99,999 |
II. Form of gray powder
Quality parameters | Analysis |
Germanium content, not less than, % | 99.5 |
GeO2 content, max, % weight | 0.5 |
Chemical purity, sum, not less than, % weight (impurities Fe, Mn, Cu, Ni, Co, Ga, Al, Mg) | 99.999 |
Grain size, mm | 10-50 |
Silicon
1. Form of product:
- - cylindrical (rods, blanks, windows);
- - rectangular (blanks, windows)
We supply semiconductor grade silicon wafers with diameter from 2"up to 6".
Also we have possibility to supply polished wafers with square and pseudo square shape in accordance to customer’s specification.
Our basic wafers parameters meet SEMI M1-00 standard.
2. Silicon Ingots
Growth method | CZ |
Type/Dopant | N-type /Phosphorus or Antimony or Arsenic doped P-type /Boron doped |
Diameter | from 2" – to 8" |
Orientation | (100) or (111) or (110) |
Resistivity | 0,001 – 140 Ohm*cm |
Oxygen content | <10*1017 at/cm3 (<20ppma) – standard (7-9)*1017 at/cm3 (14-18 ppma) – special |
Carbon content | <10*1016 at/cm3 (<2ppma) – standard <5*1016 at/cm3 (<1ppma) – special |
Dislocation density | <10cm-2 |
3. Customized silicon product
The following Silicon customized product for semiconductor industry are also supplied as per requirement
- Silicon tubes(used as reactor chambers for PECVD/CVD processes in silicon device fabrication), diameter 220mm, length 2200mm;
- Silicon disks
- Silicon targets
- Products of high purity Monocrystalline and Polycrystalline silicon with various shapes
CaF2 (Calcium Fluoride)
CaF2 had widely been applied in high power laser optics due to its low absorption. It can be used without anti-reflection coating due to its low refractive index
1. Form of product:
- - cylindrical (rods, blanks, windows);
- - rectangular (blanks, windows)
Optical Properties
Transmission Range | 0.15 to 9 microns |
Refractive Index | 1.39908 at 5 microns |
Reflection Loss | 5.5% at 5 microns (2 surfaces) |
Temperature Variation of Refractive Index (dn/dT) | -10.6 x 10-6/°C |
General Properties
Density | 3.18 g/cm3 |
Melting Point | 1360 °C |
Thermal Conductivity | 9.71 W/(m*K) |
Thermal Expansion | 18.5 x 10-6/°C |
Hardness | 158.3 kg/mm2 (100) |
Specific Heat Capacity | 854J/(kg K) |
Dielectric Constant | 6.76 |
Young's Modulus (E) | 75.8 GPa |
Shear Modulus (G) | 33.77 GPa |
Bulk Modulus (K) | 82.71 GPa |
Elastic Coefficients | C11=164 MPa, C12=53 MPa, C44=33.7 MPa |
Apparent Elastic Limit | 36.54 MPa |
Poisson Ratio | 0.26 |
ZnSe (Zinc Selenide)
ZnSe is the preferred material for a broad range of optics due to its visible transmission and its low absorption at infrared wavelengths
2. Form of product:
- - Blanks, Windows, Plates, etc
Optical Properties
Temperature Change of Refractive Index @ 10.6µm | ≤ 0.0005 cm-1 |
Refractive Index In homogeneity @ 632.8 nm | 61 x 10-6/°C |
Bulk Absorption Coefficient @ 10.6µm | < 3 x 10-6 |
General Properties
Thermal Conductivity @ 20° C | 0.18 W/cm/°C |
Specific Heat | 0.356 J/g/°C |
Linear Expansion Coefficient @ 20° C | 7.57 x 10-6/°C |
Young’s Modulus | 67.2 GPa (9.75 x 106 psi) |
Rupture Modulus | 55.1 MPa (8,000 psi) |
Knoop Hardness | 105-120 kg/mm2 |
Density | 5.27 g/cm3 |
Poisson’s Ratio | 0.28 |
*** Contact us for any of the IR optical material requirement***